The atomic structure and polarization of strained SrTiO3/Si.

Journal Article · Fri Jan 01 04:00:00 UTC 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3529460· OSTI ID:1029100

Kumath, D P; Reiner, J W; Segal, Y; Kolpak, A M; Zhang, Z; Su, D; Zhu, Y; Sawicki, M S; Broadbridge, C C; Ahn, C H; Walker, F J ^[1]

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1. X-Ray Science Division

For thin film devices based on coupling ferroelectric polarization to charge carriers in semiconductors, the role of the interface is critical. To elucidate this role, we use synchrotron x-ray diffraction to determine the interface structure of epitaxial SrTiO{sub 3} grown on the (001) surface of Si. The average displacement of the O octahedral sublattice relative to the Sr sublattice determines the film polarization and is measured to be about 0.05 nm toward the Si, with Ti off-center displacements 0.009 nm away from the substrate. Measurements of films with different boundary conditions on the top of the SrTiO{sub 3} show that the polarization at the SrTiO{sub 3}/Si interface is dominated by oxide-Si chemical interactions.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; NSF
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 1029100
• Report Number(s): ANL/XSD/JA-71412
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 97; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BOUNDARY CONDITIONS
CHARGE CARRIERS
POLARIZATION
SYNCHROTRONS
THIN FILMS
X-RAY DIFFRACTION