Anti-phase boundaries at the SrTiO{sub 3}/Si(001) interface studied using aberration-corrected scanning transmission electron microscopy
- School of Engineering for Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287 (United States)
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)
- Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
In this work, the atomic structure of anti-phase boundary defects at the SrTiO{sub 3}/Si (001) interface is investigated by aberration-corrected scanning transmission electron microscopy. Atomic-resolution images reveal an abrupt SrTiO{sub 3}/Si interface with no intermediate oxide layer. Both single and double Si atomic columns (“dumbbells”) from different terraces of the Si(001) surface are visible at the interface. Anti-phase boundaries (APB) consisting of two adjacent TiO{sub 2} planes in the SrTiO{sub 3} (STO) film resulting either from Si surface steps or from the merging of crystalline domains from different surface nucleation sites are identified. These APBs occur on either {110} or {010} planes and both types have displacement vectors of a{sub STO}/2〈110〉.
- OSTI ID:
- 22591758
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 9; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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