A breakdown model for the bipolar transistor to be used with circuit simulators
Conference
·
OSTI ID:10183471
- Alliance Technologies, Inc., Albuquerque, NM (United States)
- Sandia National Labs., Albuquerque, NM (United States)
A breakdown model for the output characteristics of the bipolar transistor (bjt) has been developed. The behavioral modeling capability of PSPICE, a popular SPICE program (with Emphasis on Integrated circuits) was used to implement the macromodel. The model predicts bjt output characteristics under breakdown conditions. Experimental data was obtained to verify the macromodel. Good agreement exits between the measured and the simulated results.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10183471
- Report Number(s):
- SAND--93-0241C; CONF-930854--2; ON: DE93019422
- Country of Publication:
- United States
- Language:
- English
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