Method to fabricate a tilted logpile photonic crystal

Patent · Tue Oct 26 00:00:00 EDT 2010

OSTI ID:1016015

Williams, John D ^[1]; Sweatt, William C ^[1]

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1. Albuquerque, NM

A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Albuquerque, NM)
• Patent Number(s): 7,820,365
• Application Number: 11/779,605
• OSTI ID: 1016015
• Country of Publication: United States
• Language: English