Method to fabricate a tilted logpile photonic crystal
Abstract
A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.
- Inventors:
-
- Albuquerque, NM
- Publication Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1016015
- Patent Number(s):
- 7,820,365
- Application Number:
- 11/779,605
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Williams, John D, and Sweatt, William C. Method to fabricate a tilted logpile photonic crystal. United States: N. p., 2010.
Web.
Williams, John D, & Sweatt, William C. Method to fabricate a tilted logpile photonic crystal. United States.
Williams, John D, and Sweatt, William C. 2010.
"Method to fabricate a tilted logpile photonic crystal". United States. https://www.osti.gov/servlets/purl/1016015.
@article{osti_1016015,
title = {Method to fabricate a tilted logpile photonic crystal},
author = {Williams, John D and Sweatt, William C},
abstractNote = {A method to fabricate a tilted logpile photonic crystal requires only two lithographic exposures and does not require mask repositioning between exposures. The mask and photoresist-coated substrate are spaced a fixed and constant distance apart using a spacer and the stack is clamped together. The stack is then tilted at a crystallographic symmetry angle (e.g., 45 degrees) relative to the X-ray beam and rotated about the surface normal until the mask is aligned with the X-ray beam. The stack is then rotated in plane by a small stitching angle and exposed to the X-ray beam to pattern the first half of the structure. The stack is then rotated by 180.degree. about the normal and a second exposure patterns the remaining half of the structure. The method can use commercially available DXRL scanner technology and LIGA processes to fabricate large-area, high-quality tilted logpile photonic crystals.},
doi = {},
url = {https://www.osti.gov/biblio/1016015},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 26 00:00:00 EDT 2010},
month = {Tue Oct 26 00:00:00 EDT 2010}
}
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