Fabrication of large area Si cylindrical drift detectors. Revision
Conference
·
OSTI ID:10159520
- Brookhaven National Lab., Upton, NY (United States)
- Maxplanck Inst. of Nuclear Physics, Heidelberg (Germany)
The processing of an advanced silicon detector, a large area cylindrical drift detector (CDD), was carried out in the BNL Instrumentation Division Fabrication Facility. The double-sided planar process technique was developed for the fabrication of the CDD. Important improvements of the double-sided planar process in this fabrication include the introduction of an Al implantation protection mask and implantation of boron through an 1000 angstrom oxide layer in the step of opening the p-window. Another important aspect of the design of the CDD is the structure called ``river,`` which allows the current generated OD the Si-SiO{sub 2} interface to ``flow`` into the guard anode, and thus minimize the leakage, current at the signal anode. The test result showed that for the best detector most of the signal anodes have leakage currents of about 0.3 nA/cm{sup 2}.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10159520
- Report Number(s):
- BNL--49016-Rev.; CONF-931107--1; ON: DE94013534
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fabrication of large area Si cylindrical drift detectors
Fabrication of large area Si cylindric drift detectors
P-type silicon drift detectors: First results
Conference
·
Mon Aug 01 00:00:00 EDT 1994
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6883741
Fabrication of large area Si cylindric drift detectors
Conference
·
Wed Mar 31 23:00:00 EST 1993
·
OSTI ID:10166849
P-type silicon drift detectors: First results
Journal Article
·
Tue Aug 01 00:00:00 EDT 1995
· IEEE Transactions on Nuclear Science
·
OSTI ID:129122