P-type silicon drift detectors: First results

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.467847· OSTI ID:129122

Wang, N W; Krieger, B; Krofcheck, D ^[1]

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1. Lawrence Berkeley Lab., CA (United States); and others

The authors have fabricated a 4 cm x 4 cm, position-sensitive silicon drift detector using high purity, p-type silicon as the substrate. In this paper, they describe the double-sided planar process used to fabricate the detectors and the strategy used to suppress surface carrier inversion due to the presence of fixed positive charge at the Si/SiO{sub 2} interface. The key issue in optimizing the fabrication process has been to minimize leakage currents and prevent breakdown at low voltages. Tests show that a drift signal can be measured across the entire length of the detector and that the transit time of the holes varies linearly with the position of the induced charge signal.

• OSTI ID: 129122
• Report Number(s): CONF-941061--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DESIGN
FABRICATION
OPERATION
P-TYPE CONDUCTORS
PERFORMANCE TESTING
POSITION SENSITIVE DETECTORS
SI SEMICONDUCTOR DETECTORS
SILICON
SILICON OXIDES