Fabrication of large area Si cylindrical drift detectors

Conference · Mon Aug 01 04:00:00 EDT 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6883741

Chen, W; Kraner, H W; Li, Z; Rehak, P ^[1]; Hess, F ^[2]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Max Planck Inst. for Nuclear Physics, Heidelberg (Germany)

The processing of an advanced silicon detector, a large area cylindrical drift detector (CDD), was carried out in the BNL Instrumentation Division Fabrication Facility. The double-sided planar process technique was developed for the fabrication of the CDD. Important improvements of the double-sided planar process in this fabrication include the introduction of an A1 implantation protection mask and implantation of boron through an 1000 angstrom oxide layer in the step of opening the p-window. Another important aspect of the design of the CDD is the structure called ''river,'' which allows the current generated on the Si-SiO[sub 2] interface to ''flow'' into the guard anode, and thus minimize the leakage current at the signal anode. The test result showed that for the best detector most of the signal anodes have leakage currents of about 0.3 nA/cm[sup 2].

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6883741
• Report Number(s): CONF-931051--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:4Pt1
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM
BORON
CHALCOGENIDES
CLEAN ROOMS
DESIGN
DRIFT CHAMBERS
ELEMENTS
FABRICATION
HIGH ENERGY PHYSICS
ION IMPLANTATION
MEASURING INSTRUMENTS
METALS
MULTIWIRE PROPORTIONAL CHAMBERS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PHYSICS
PROPORTIONAL COUNTERS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SI SEMICONDUCTOR DETECTORS
SILICON COMPOUNDS
SILICON OXIDES