High-Resolution Field Effect Sensing of Ferroelectric Charges

Journal Article · Sat Jan 01 04:00:00 EST 2011 · Nature Nanotechnology

DOI:https://doi.org/10.1021/nl103372a· OSTI ID:1015684

Ko, Hyoungsoo ^[1]; Ryu, Kyunghee ^[2]; Park, Hongsik ^[1]; Park, Chulmin ^[1]; Jeon, Daeyoung ^[1]; Kim, Yong Kwan ^[1]; Jung, Juhwan ^[1]; Min, Dong-Ki ^[1]; Kim, Yunseok ^[3]; Lee, Ho Nyung ^[4]; Park, Yoondong ^[1]; Shin, Hyunjung ^[2]; Hong, Seungbum ^[1]

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1. Samsung Advanced Institute of Science and Technology, Korea
2. Kookmin University
3. Max-Planck-Institut fur Mikrostrukturphysik, Germany
4. ORNL

Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 {micro}s. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 {micro}C/cm{sup 2}, which is equivalent to 1/20 electron per nanometer square at room temperature.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1015684
• Journal Information: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 4 Vol. 11; ISSN 1530-6984
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
CHARGE DENSITY
ELECTRODYNAMICS
ELECTRONS
ELECTROSTATICS
FIELD EFFECT TRANSISTORS
MICROSCOPY
MODULATION
PROBES
RESOLUTION
TRANSPORT