High resolution field effect sensing of ferroelectric charges.

Journal Article · Fri Mar 04 04:00:00 EST 2011 · Nano Lett.

DOI:https://doi.org/10.1021/nl103372a· OSTI ID:1012805

Ko, H; Ryu, K; Park, H; Park, C; Jeon, D; Kim, Y K; Jung, J; Min, D -K; Kim, Y; Lee, H N; Park, Y; Shin, H; Hong, S ^[1]

---

1. Materials Science Division

Nanoscale manipulation of surface charges and their imaging are essential for understanding local electronic behaviors of polar materials and advanced electronic devices. Electrostatic force microscopy and Kelvin probe force microscopy have been extensively used to probe and image local surface charges responsible for electrodynamics and transport phenomena. However, they rely on the weak electric force modulation of cantilever that limits both spatial and temporal resolutions. Here we present a field effect transistor embedded probe that can directly image surface charges on a length scale of 25 nm and a time scale of less than 125 {micro}s. On the basis of the calculation of net surface charges in a 25 nm diameter ferroelectric domain, we could estimate the charge density resolution to be as low as 0.08 {micro}C/cm{sup 2}, which is equivalent to 1/20 electron per nanometer square at room temperature.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; Samsung Electronics, Inc.; MEST/KOSEF
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 1012805
• Report Number(s): ANL/MSD/JA-67442
• Journal Information: Nano Lett., Journal Name: Nano Lett. Journal Issue: Mar. 4, 2011 Vol. 11; ISSN 1530-6984
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
CHARGE DENSITY
ELECTRODYNAMICS
FERROELECTRIC MATERIALS
FIELD EFFECT TRANSISTORS
MICROSCOPY
PROBES
RESOLUTION
SURFACE PROPERTIES