Aligned crystalline semiconducting film on a glass substrate and method of making
Patent
·
OSTI ID:1013807
- Los Alamos, NM
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.
- Research Organization:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC52-06NA25396
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- Patent Number(s):
- 7,781,067
- Application Number:
- 11/581,978
- OSTI ID:
- 1013807
- Country of Publication:
- United States
- Language:
- English
Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates
|
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