Growth of Epitaxial gamma-Al₂O₃ Films on Rigid Single-Crystal Ceramic Substrates and Flexible, Single-Crystal-Like Metallic Substrates by Pulsed Laser Deposition

Journal Article · Thu Jan 01 04:00:00 EST 2009 · Thin Solid Films

DOI:https://doi.org/10.1016/j.tsf.2009.02.116· OSTI ID:963674

Shin, Junsoo ^[1]; Goyal, Amit ^[1]; Wee, Sung Hun ^[1]

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1. ORNL

Epitaxial -Al2O3 thin films were grown on diverse substrates using pulsed laser deposition. The high quality of epitaxial growth and cubic structure of -Al2O3 films was confirmed by x-ray diffraction. SrTiO3 and MgO single crystal substrates were used to optimize the growth conditions for epitaxial -Al2O3 film. Under the optimized conditions, epitaxial -Al2O3 thin films were grown on flexible, single-crystal-like, metallic templates. These included untextured Hastelloy substrates with a biaxially textured MgO layer deposited using ion-beam-assisted-deposition and biaxially textured Ni-W metallic tapes with epitaxially grown and a biaxially textured, MgO buffer layer. These biaxially textured, -Al2O3 films on flexible, single-crystal-like substrates are promising for subsequent epitaxial growth of various complex oxide films used for electrical, magnetic and electronic device applications.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: ORNL LDRD Director's R&D
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 963674
• Journal Information: Thin Solid Films, Journal Name: Thin Solid Films Journal Issue: 19 Vol. 517; ISSN THSFAP; ISSN 0040-6090
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BUFFERS
CERAMICS
DEPOSITION
HASTELLOYS
LASERS
MONOCRYSTALS
OXIDES
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION