Conductive layer for biaxially oriented semiconductor film growth
- Los Alamos, NM
- Santa Fe, NM
A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- Los Almos National Security, LLC (Los Almos, NM)
- Patent Number(s):
- 7,288,332
- Application Number:
- 11/245,721
- OSTI ID:
- 919057
- Country of Publication:
- United States
- Language:
- English
Thin biaxially textured TiN films on amorphous substrates prepared by ion-beam assisted pulsed laser deposition
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journal | October 2004 |
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