Aligned crystalline semiconducting film on a glass substrate and method of making
Abstract
A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.
- Inventors:
-
- Los Alamos, NM
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1013807
- Patent Number(s):
- 7,781,067
- Application Number:
- 11/581,978
- Assignee:
- Los Alamos National Security, LLC (Los Alamos, NM)
- DOE Contract Number:
- AC52-06NA25396
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Findikoglu, Alp T. Aligned crystalline semiconducting film on a glass substrate and method of making. United States: N. p., 2010.
Web.
Findikoglu, Alp T. Aligned crystalline semiconducting film on a glass substrate and method of making. United States.
Findikoglu, Alp T. 2010.
"Aligned crystalline semiconducting film on a glass substrate and method of making". United States. https://www.osti.gov/servlets/purl/1013807.
@article{osti_1013807,
title = {Aligned crystalline semiconducting film on a glass substrate and method of making},
author = {Findikoglu, Alp T},
abstractNote = {A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.},
doi = {},
url = {https://www.osti.gov/biblio/1013807},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 24 00:00:00 EDT 2010},
month = {Tue Aug 24 00:00:00 EDT 2010}
}
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Works referenced in this record:
Well-Oriented Silicon Thin Films with High Carrier Mobility on Polycrystalline Substrates
journal, June 2005
- Findikoglu, A. T.; Choi, W.; Matias, V.
- Advanced Materials, Vol. 17, Issue 12