Temperature dependence of Static RAM volatility
Conference
·
OSTI ID:10102614
We have measured the temperature dependence of the volatility of a wide variety of Static RAMS. The temperature dependence is directly related to the memory cell design and device processing or fabrication parameters. We have seen the volatility change by {approximately}10 orders of magnitude when the absolute temperature is changed by a factor of {approximately}2. We present physical reasons for such a large temperature dependence and derive an analytical model which accurately predicts the volatility. Neutron irradiation is seen to increase the low-temperature volatility.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10102614
- Report Number(s):
- SAND--93-1926C; CONF-940217--1; ON: DE93040345
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DAMAGING NEUTRON FLUENCE
DIGITAL SYSTEMS
IRRADIATION
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
426000
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DAMAGING NEUTRON FLUENCE
DIGITAL SYSTEMS
IRRADIATION
MEMORY DEVICES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE