Low temperature proton induced upsets in nmos resistive load static ram
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6268152
Proton induced upset measurements have been performed on some NMOS resistive load static RAMs for temperatures down to -125/sup 0/C. Results show that the upset cross section strongly depends on temperature as well as incident beam flux. SPICE modelling for the critical charge versus temperature is not sufficient to explain the data. An explanation is provided that describes multiple sub-critical LET particles strikes within RAM cell integration times causing upsets.
- Research Organization:
- Naval Research Lab., Washington, DC (US); Vanderbilt Univ., Nashville, TN (US)
- OSTI ID:
- 6268152
- Report Number(s):
- CONF-880730-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CHANNELING
CROSS SECTIONS
ELECTRONIC CIRCUITS
ENERGY TRANSFER
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LOW TEMPERATURE
MEMORY DEVICES
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MOS TRANSISTORS
PROTON CHANNELING
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RESEARCH AND TEST REACTORS
SEMICONDUCTOR DEVICES
SUBCRITICAL ASSEMBLIES
TEMPERATURE DEPENDENCE
TRANSISTORS
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
654001* -- Radiation & Shielding Physics-- Radiation Physics
Shielding Calculations & Experiments
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
CHANNELING
CROSS SECTIONS
ELECTRONIC CIRCUITS
ENERGY TRANSFER
EXPERIMENTAL REACTORS
INTEGRATED CIRCUITS
LET
LOW TEMPERATURE
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PROTON CHANNELING
REACTORS
RESEARCH AND TEST REACTORS
SEMICONDUCTOR DEVICES
SUBCRITICAL ASSEMBLIES
TEMPERATURE DEPENDENCE
TRANSISTORS