CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
Abstract
A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.
- Inventors:
-
- Kingston, TN
- Oak Ridge, TN
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 871947
- Patent Number(s):
- 5830270
- Assignee:
- Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- catio; interfacial; template; structure; semiconductor-based; material; growth; electroceramic; thin-films; perovskite; including; film; desired; oxide; overlies; commensurate; surface; substrate; associated; process; constructing; involves; build; lattice; parameters; account; orientation; rotated; 45; degree; respect; underlying; effects; transition; fcc; simple; cubic; periodicity; maintained; film-growth; techniques; fabricate; solid; electrical; components; built; adapted; exhibit; ferroelectric; piezoelectric; pyroelectric; electro-optic; dielectric; properties; component; semiconductor-based material; structure including; electrical components; material surface; lattice structure; plate structure; lattice parameter; exhibit ferroelectric; dielectric properties; perovskite oxide; electrical component; /117/427/
Citation Formats
McKee, Rodney Allen, and Walker, Frederick Joseph. CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class. United States: N. p., 1998.
Web.
McKee, Rodney Allen, & Walker, Frederick Joseph. CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class. United States.
McKee, Rodney Allen, and Walker, Frederick Joseph. Thu .
"CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class". United States. https://www.osti.gov/servlets/purl/871947.
@article{osti_871947,
title = {CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class},
author = {McKee, Rodney Allen and Walker, Frederick Joseph},
abstractNote = {A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}
Works referenced in this record:
Fabrication of Barium Titanate/Strontium Titanate Artificial Superlattice by Atomic Layer Epitaxy
journal, September 1994
- Tsurumi, Takaaki; Suzuki, Toshimasa; Yamane, Masayuki
- Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 9B
Atomic layer growth of oxide thin films with perovskite‐type structure by reactive evaporation
journal, October 1992
- Iijima, K.; Terashima, T.; Bando, Y.
- Journal of Applied Physics, Vol. 72, Issue 7