Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:872849

McKee, Rodney Allen ^[1]; Walker, Frederick Joseph ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: Lockheed Martin Energy Research Corporation (Oak Ridge, TN)
• Patent Number(s): US 6023082
• OSTI ID: 872849
• Country of Publication: United States
• Language: English

Related Subjects

strain-based
control
crystal
anisotropy
perovskite
oxides
semiconductor-based
material
crystalline
structure
semiconductor
device
substrate
film
anisotropic
epitaxially
arranged
surface
couples
underlying
geometries
substantially
unit
cells
predisposed
orientation
relative
predisposition
responsible
directional-dependent
quality
dipole
moment
cell
influenced
stressed
strained
condition
lattice
interface
semiconductor-based material
predisposed orientation
underlying substrate
crystalline material
unit cells
substrate surface
semiconductor device
crystalline structure
film material
unit cell
orientation relative
perovskite oxides
dipole moment
perovskite oxide
line structure
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