Anisotropy-based crystalline oxide-on-semiconductor material

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:873109

McKee, Rodney Allen ^[1]; Walker, Frederick Joseph ^[2]

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1. Kingston, TN
2. Oak Ridge, TN

A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation. For example, in the instance in which the crystalline oxide of the structure is a perovskite, a spinel or an oxide of similarly-related cubic structure, the structure can, within an appropriate semiconductor device, exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic, ferromagnetic, antiferromagnetic, magneto-optic or large dielectric properties that synergistically couple to the underlying semiconductor substrate.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• DOE Contract Number: AC05-96OR22464
• Assignee: UT-Battelle, LLC (Oak Ridge, TN)
• Patent Number(s): US 6093242
• OSTI ID: 873109
• Country of Publication: United States
• Language: English

Related Subjects

anisotropy-based
crystalline
oxide-on-semiconductor
material
semiconductor
structure
device
application
utilizes
substrate
semiconductor-based
silicon
film
oxide
unit
cells
capable
exhibiting
anisotropic
behavior
overlying
surface
exposed
in-plane
stain
influences
geometric
shape
arranges
directional-dependent
quality
predisposed
orientation
relative
predisposition
enables
beneficial
advantage
characteristics
operation
example
instance
perovskite
spinel
similarly-related
cubic
appropriate
exhibit
ferroelectric
piezoelectric
pyroelectric
electro-optic
ferromagnetic
antiferromagnetic
magneto-optic
dielectric
properties
synergistically
couple
underlying
semiconductor-based material
underlying semiconductor
crystalline oxide
predisposed orientation
unit cells
semiconductor substrate
semiconductor material
substrate surface
semiconductor device
unit cell
orientation relative
semiconductor structure
geometric shape
cubic structure
exhibit ferroelectric
dielectric properties
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