Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 929610
- Report Number(s):
- NREL/CP-520-42547; TRN: US200813%%260
- Resource Relation:
- Conference: Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California
- Country of Publication:
- United States
- Language:
- English
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