40.8% Efficient Inverted Triple-Junction Solar Cell with Two Independently Metamorphic Junctions
A photovoltaic conversion efficiency of 40.8% at 326 suns concentration is demonstrated in a monolithically grown, triple-junction III-V solar cell structure in which each active junction is composed of an alloy with a different lattice constant chosen to maximize the theoretical efficiency. The semiconductor structure was grown by organometallic vapor phase epitaxy in an inverted configuration with a 1.83 eV Ga{sub .51}In{sub .49}P top junction lattice-matched to the GaAs substrate, a metamorphic 1.34 eV In{sub .04}Ga{sub .96}As middle junction, and a metamorphic 0.89 eV In{sub .37}Ga{sub .63}As bottom junction. The two metamorphic junctions contained approximately 1 x 10{sup 5} cm{sup -2} and 2-3 x 10{sup 6} cm{sup -2} threading dislocations, respectively.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO.
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337
- OSTI ID:
- 947414
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12, 2008 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint
Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell
High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells
Conference
·
Wed Apr 30 20:00:00 EDT 2008
·
OSTI ID:929610
Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell
Journal Article
·
Tue Dec 19 19:00:00 EST 2017
· IEEE Journal of Photovoltaics
·
OSTI ID:1417798
High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells
Journal Article
·
Sun Jan 28 19:00:00 EST 2018
· Applied Physics Letters
·
OSTI ID:1422877