Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint
Abstract
We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.
- Authors:
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 929610
- Report Number(s):
- NREL/CP-520-42547
Journal ID: ISSN 0160--8371; TRN: US200813%%260
- DOE Contract Number:
- AC36-99-GO10337
- Resource Type:
- Conference
- Resource Relation:
- Conference: Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CONFIGURATION; DESIGN; DISLOCATIONS; EFFICIENCY; PERFORMANCE; SOLAR CELLS; GE FREE; INVERTED CONFIGURATION; PV; TRIPLE-JUNCTION; HIGH EFFICIENCY; SEMICONDUCTOR; LOW-STRESS; METAMORPHIC JUNCTION; SOLAR SPECTRUM; Solar Energy - Photovoltaics
Citation Formats
Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, and Jones, K M. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint. United States: N. p., 2008.
Web. doi:10.1109/PVSC.2008.4922452.
Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, & Jones, K M. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint. United States. https://doi.org/10.1109/PVSC.2008.4922452
Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, and Jones, K M. 2008.
"Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint". United States. https://doi.org/10.1109/PVSC.2008.4922452. https://www.osti.gov/servlets/purl/929610.
@article{osti_929610,
title = {Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint},
author = {Geisz, J F and Kurtz, S R and Wanlass, M W and Ward, J S and Duda, A and Friedman, D J and Olson, J M and McMahon, W E and Moriarty, T E and Kiehl, J T and Romero, M J and Norman, A G and Jones, K M},
abstractNote = {We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.},
doi = {10.1109/PVSC.2008.4922452},
url = {https://www.osti.gov/biblio/929610},
journal = {},
issn = {0160--8371},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2008},
month = {Thu May 01 00:00:00 EDT 2008}
}