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Title: Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

Abstract

We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
929610
Report Number(s):
NREL/CP-520-42547
Journal ID: ISSN 0160--8371; TRN: US200813%%260
DOE Contract Number:  
AC36-99-GO10337
Resource Type:
Conference
Resource Relation:
Conference: Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CONFIGURATION; DESIGN; DISLOCATIONS; EFFICIENCY; PERFORMANCE; SOLAR CELLS; GE FREE; INVERTED CONFIGURATION; PV; TRIPLE-JUNCTION; HIGH EFFICIENCY; SEMICONDUCTOR; LOW-STRESS; METAMORPHIC JUNCTION; SOLAR SPECTRUM; Solar Energy - Photovoltaics

Citation Formats

Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, and Jones, K M. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint. United States: N. p., 2008. Web. doi:10.1109/PVSC.2008.4922452.
Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, & Jones, K M. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint. United States. https://doi.org/10.1109/PVSC.2008.4922452
Geisz, J F, Kurtz, S R, Wanlass, M W, Ward, J S, Duda, A, Friedman, D J, Olson, J M, McMahon, W E, Moriarty, T E, Kiehl, J T, Romero, M J, Norman, A G, and Jones, K M. 2008. "Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint". United States. https://doi.org/10.1109/PVSC.2008.4922452. https://www.osti.gov/servlets/purl/929610.
@article{osti_929610,
title = {Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint},
author = {Geisz, J F and Kurtz, S R and Wanlass, M W and Ward, J S and Duda, A and Friedman, D J and Olson, J M and McMahon, W E and Moriarty, T E and Kiehl, J T and Romero, M J and Norman, A G and Jones, K M},
abstractNote = {We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.},
doi = {10.1109/PVSC.2008.4922452},
url = {https://www.osti.gov/biblio/929610}, journal = {},
issn = {0160--8371},
number = ,
volume = ,
place = {United States},
year = {Thu May 01 00:00:00 EDT 2008},
month = {Thu May 01 00:00:00 EDT 2008}
}

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