Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint

Conference · Thu May 01 04:00:00 EDT 2008

DOI:https://doi.org/10.1109/PVSC.2008.4922452· OSTI ID:929610

Geisz, J F; Kurtz, S R; Wanlass, M W; Ward, J S; Duda, A; Friedman, D J; Olson, J M; McMahon, W E; Moriarty, T E; Kiehl, J T; Romero, M J; Norman, A G; Jones, K M

We demonstrate high efficiency performance in two ultra-thin, Ge-free III-V semiconductor triple-junction solar cell device designs grown in an inverted configuration. Low-stress metamorphic junctions were engineered to achieve excellent photovoltaic performance with less than 3 x 106 cm-2 threading dislocations. The first design with band gaps of 1.83/1.40/1.00 eV, containing a single metamorphic junction, achieved 33.8% and 39.2% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 131 suns, respectively. The second design with band gaps of 1.83/1.34/0.89 eV, containing two metamorphic junctions achieved 33.2% and 40.1% efficiencies under the standard one-sun global spectrum and concentrated direct spectrum at 143 suns, respectively.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO.
• Sponsoring Organization: USDOE
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 929610
• Report Number(s): NREL/CP-520-42547
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CONFIGURATION
DESIGN
DISLOCATIONS
EFFICIENCY
GE FREE
HIGH EFFICIENCY
INVERTED CONFIGURATION
LOW-STRESS
METAMORPHIC JUNCTION
PERFORMANCE
PV
SEMICONDUCTOR
SOLAR CELLS
SOLAR SPECTRUM
Solar Energy - Photovoltaics
TRIPLE-JUNCTION