Electron emission and defect formation in the interaction of slow,highly charged ions with diamond surfaces
We report on electron emission and defect formation in theinteraction between slow (v~;0.3 vBohr) highly charged ions (SHCI) withinsulating (type IIa) and semiconducting (type IIb) diamonds. Electronemission induced by 31Pq+ (q=5 to 13), and 136Xeq+ (q=34 to 44) withkinetic energies of 9 kVxq increase linearly with the ion charge states,reaching over 100 electrons per ion for high xenon charge states withoutsurface passivation of the diamond with hydrogen. Yields from bothdiamond types are up to a factor of two higher then from reference metalsurfaces. Crater like defects with diameters of 25 to 40 nm are formed bythe impact of single Xe44+ ions. High secondary electron yields andsingle ion induced defects enable the formation of single dopant arrayson diamond surfaces.
- Research Organization:
- COLLABORATION - School of Physics, Universityof the Witwatersrand, Wits 2050, Johannesburg, SouthAfrica
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 927325
- Report Number(s):
- LBNL-62777; R&D Project: 43GW04; TRN: US200811%%96
- Journal Information:
- Nuclear Instruments and Methods in Physics ResearchB, Vol. 256; Related Information: Journal Publication Date: 2007
- Country of Publication:
- United States
- Language:
- English
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