GeSi strained nanostructure self-assembly for nano- and opto-electronics.
Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 889001
- Report Number(s):
- SAND2005-0101; TRN: US200619%%325
- Country of Publication:
- United States
- Language:
- English
Similar Records
Beyond the heteroepitaxial quantum dot : self-assembling complex nanostructures controlled by strain and growth kinetics.
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy
Journal Article
·
Wed Jun 01 00:00:00 EDT 2005
· Proposed for publication in Physical Review B.
·
OSTI ID:889001
+3 more
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands
Journal Article
·
Tue May 15 00:00:00 EDT 2018
· Semiconductors
·
OSTI ID:889001
+1 more
Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy
Journal Article
·
Mon May 03 00:00:00 EDT 2010
· Applied Physics Letters
·
OSTI ID:889001
+2 more