Spatially direct and indirect transitions of self-assembled GeSi/Si quantum dots studied by photoluminescence excitation spectroscopy

Journal Article · Mon May 03 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3424789· OSTI ID:21347413

Adnane, B; Karlsson, K F; Hansson, G V; Holtz, P O; Ni, W -X ^[1]

---

1. Department of Physics, Chemistry, and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)

Well-resolved photoluminescence excitation (PLE) spectra are reported for self-assembled GeSi dots grown on Si(001) by molecular beam epitaxy. The observation of two excitation resonance peaks is attributed to two different excitation/de-excitation routes of interband optical transitions connected to the spatially direct and indirect recombination processes. It is concluded that two dot populations are addressed by each monitored luminescence energy for the PLE acquisition.

• OSTI ID: 21347413
• Journal Information: Applied Physics Letters, Vol. 96, Issue 18; Other Information: DOI: 10.1063/1.3424789; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
DE-EXCITATION
EXCITATION
GERMANIUM ALLOYS
GERMANIUM SILICIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SPECTROSCOPY
ALLOYS
CRYSTAL GROWTH METHODS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
GERMANIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PHOTON EMISSION
SEMIMETALS
SILICIDES
SILICON COMPOUNDS