Sealable stagnation flow geometries for the uniform deposition of materials and heat

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873769

McCarty, Kevin F ^[1]; Kee, Robert J ^[1]; Lutz, Andrew E ^[2]; Meeks, Ellen ^[1]

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1. Livermore, CA
2. Alamo, CA

The present invention employs a constrained stagnation flow geometry apparatus to achieve the uniform deposition of materials or heat. The present invention maximizes uniform fluxes of reactant gases to flat surfaces while minimizing the use of reagents and finite dimension edge effects. This results, among other things, in large area continuous films that are uniform in thickness, composition and structure which is important in chemical vapor deposition processes such as would be used for the fabrication of semiconductors.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AC04-94AL85000
• Assignee: Sandia Corporation (Livermore, CA)
• Patent Number(s): US 6242049
• OSTI ID: 873769
• Country of Publication: United States
• Language: English

Related Subjects

sealable
stagnation
flow
geometries
uniform
deposition
materials
heat
employs
constrained
geometry
apparatus
achieve
maximizes
fluxes
reactant
gases
flat
surfaces
minimizing
reagents
finite
dimension
edge
effects
results
continuous
films
thickness
composition
structure
chemical
vapor
processes
fabrication
semiconductors
stagnation flow
reactant gases
chemical vapor
vapor deposition
deposition process
reactant gas
deposition processes
uniform deposition
edge effects
flat surface
flow geometries
finite dimension
uniform deposit
continuous film
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