Low work function, stable compound clusters and generation process

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:872837

Dinh, Long N ^[1]; Balooch, Mehdi ^[2]; Schildbach, Marcus A ^[3]; Hamza, Alex V ^[3]

---

1. Concord, CA
2. Berkeley, CA
3. Livermore, CA

Low work function, stable compound clusters are generated by co-evaporation of a solid semiconductor (i.e., Si) and alkali metal (i.e., Cs) elements in an oxygen environment. The compound clusters are easily patterned during deposition on substrate surfaces using a conventional photo-resist technique. The cluster size distribution is narrow, with a peak range of angstroms to nanometers depending on the oxygen pressure and the Si source temperature. Tests have shown that compound clusters when deposited on a carbon substrate contain the desired low work function property and are stable up to 600.degree. C. Using the patterned cluster containing plate as a cathode baseplate and a faceplate covered with phosphor as an anode, one can apply a positive bias to the faceplate to easily extract electrons and obtain illumination.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 6019913
• OSTI ID: 872837
• Country of Publication: United States
• Language: English

Related Subjects

function
stable
compound
clusters
generation
process
generated
co-evaporation
solid
semiconductor
alkali
metal
cs
elements
oxygen
environment
easily
patterned
deposition
substrate
surfaces
conventional
photo-resist
technique
cluster
size
distribution
narrow
peak
range
angstroms
nanometers
depending
pressure
source
temperature
tests
shown
deposited
carbon
contain
desired
property
600
degree
containing
plate
cathode
baseplate
faceplate
covered
phosphor
anode
apply
positive
bias
extract
electrons
obtain
illumination
size distribution
alkali metal
substrate surface
oxygen pressure
stable compound
oxygen environment
substrate surfaces
compound clusters
solid semiconductor
generation process
substrate contain
/252/445/