Method of forming electrical pathways in indium-tin-oxide coatings
Patent
·
OSTI ID:870849
- Knoxville, TN
An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
- Patent Number(s):
- US 5607731
- OSTI ID:
- 870849
- Country of Publication:
- United States
- Language:
- English
Surface reconstructions of oxygen deficient SnO2(110)
|
journal | December 1989 |
Studies of H+2 implantation into indium-tin oxide films
|
journal | February 1989 |
Donor generation from native defects induced by In + implantation into tin‐doped indium oxide
|
journal | March 1995 |
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films
|
journal | April 1993 |
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thereon
portion
conductive
defines
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providing
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leaving
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forming
electrical
pathways
indium-tin-oxide
coatings
device
substrate
ito
coating
thereon
portion
conductive
defines
pathway
balance
insulative
following
steps
providing
surface
rendering
preselected
leaving
remaining
coating thereon
electrical pathway
oxide coating
remaining portion
selected portion
electrical path
electrical device
forming electrical
ito coating
oxide coatings
indium-tin-oxide coatings
preselected portion
electrical pathways
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