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Method of forming electrical pathways in indium-tin-oxide coatings

Patent ·
OSTI ID:870715
 [1]
  1. Knoxville, TN
+ Show Author Affiliations
An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.
Research Organization:
LOCKHEED MARTIN ENRGY SYST INC
DOE Contract Number:
AC05-84OR21400
Assignee:
Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5580641
OSTI ID:
870715
Country of Publication:
United States
Language:
English

References (4)

Studies of H+2 implantation into indium-tin oxide films journal February 1989
Donor generation from native defects induced by In + implantation into tin‐doped indium oxide journal March 1995
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films journal April 1993
Surface reconstructions of oxygen deficient SnO2(110) journal December 1989

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Related Subjects

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