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Title: Method of forming electrical pathways in indium-tin-oxide coatings

Patent ·
OSTI ID:870715

An electrical device includes a substrate having an ITO coating thereon, a portion of which is conductive and defines at least one electrical pathway, and the balance of the ITO being insulative. The device is made by the following general steps: a. providing a substrate having a conductive ITO coating on at least one surface thereof; b. rendering a preselected portion of the coating of conductive ITO insulative, leaving the remaining portion of conductive ITO as at least one electrical pathway.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
DOE Contract Number:
AC05-84OR21400
Assignee:
Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
Patent Number(s):
US 5580641
OSTI ID:
870715
Country of Publication:
United States
Language:
English

References (4)

Surface reconstructions of oxygen deficient SnO2(110) journal December 1989
Studies of H+2 implantation into indium-tin oxide films journal February 1989
Donor generation from native defects induced by In + implantation into tin‐doped indium oxide journal March 1995
Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films journal April 1993