Superlattice strain gage
Patent
·
OSTI ID:867314
- Espanola, NM
- Los Alamos, NM
A strain gage comprising a strained-layer superlattice crystal exhibiting piezoelectric properties is described. A substrate upon which such a strained-layer superlattice crystal has been deposited is attached to an element to be monitored for strain. A light source is focused on the superlattice crystal and the light reflected from, passed through, or emitted from the crystal is gathered and compared with previously obtained optical property data to determine the strain in the element.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- DOE Contract Number:
- W-7405-ENG-36
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4912355
- OSTI ID:
- 867314
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
superlattice
strain
gage
comprising
strained-layer
crystal
exhibiting
piezoelectric
properties
described
substrate
deposited
attached
element
monitored
light
source
focused
reflected
passed
emitted
gathered
compared
previously
obtained
optical
property
data
determine
strained-layer superlattice
light reflected
light source
strain gage
optical property
superlattice crystal
layer superlattice
lattice strain
/310/73/
strain
gage
comprising
strained-layer
crystal
exhibiting
piezoelectric
properties
described
substrate
deposited
attached
element
monitored
light
source
focused
reflected
passed
emitted
gathered
compared
previously
obtained
optical
property
data
determine
strained-layer superlattice
light reflected
light source
strain gage
optical property
superlattice crystal
layer superlattice
lattice strain
/310/73/