Superlattice strain gage

Patent · Tue Jun 28 00:00:00 EDT 1988

OSTI ID:6045619

Noel, B. W.; Smith, D. L.; Sinha, D. N.

A strain gage comprising a strained-layer superlattice crystal exhibiting piezoelectric properties is described. A substrate upon which such a strained-layer superlattice crystal has been deposited is attached to an element to be monitored for strain. A light source is focused on the superlattice crystal and the light reflected from, passed through, or emitted from the crystal is gathered and compared with previously obtained optical property data to determine the strain in the element. 8 figs.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7212854
• Application Number: ON: DE89011805
• OSTI ID: 6045619
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
STRAIN GAGES
DESIGN
ALUMINIUM
ARSENIC
CRYSTAL GROWTH
CRYSTAL LATTICES
GALLIUM
INDIUM
INVENTIONS
PIEZOELECTRICITY
STRAINS
SUBSTRATES
CRYSTAL STRUCTURE
ELECTRICITY
ELEMENTS
MEASURING INSTRUMENTS
METALS
SEMIMETALS
420200* - Engineering- Facilities
Equipment
& Techniques
360603 - Materials- Properties