Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
- Albuquerque, NM
A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space which includes a lowest energy .GAMMA.-valley and a next lowest energy L-valley, each k-vector corresponding to one of the orthogonal directions defined by the planes of said layers and the directions perpendicular thereto. The layer thicknesses of the quantum well layers are selected to provide a superlattice L.sub.2D -valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4797716
- OSTI ID:
- 866815
- Country of Publication:
- United States
- Language:
- English
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Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields
Related Subjects
transistor
superlattice
channel
carrier
velocities
applied
fields
field
effect
comprises
semiconductor
source
drain
gate
operational
relationship
strained
layer
comprising
alternating
quantum
barrier
layers
selected
pairs
consisting
ingaas
algaas
inas
inalgaas
inalasp
thicknesses
sufficiently
constitute
conduction
band
energy
level
structure
k-vector
space
lowest
gamma
-valley
l-valley
corresponding
orthogonal
directions
defined
planes
perpendicular
thereto
provide
2d
shape
substantially
two-dimensional
bulk
conduction band
perpendicular thereto
field-effect transistor
field effect
energy level
alternating layers
barrier layer
strained layer
barrier layers
effect transistor
layer thickness
orthogonal directions
comprising alternating
layer pairs
layer superlattice
directions perpendicular
transistor comprises
orthogonal direction
vector corresponding
applied fields
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