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Title: Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Abstract

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
OSTI Identifier:
7014915
Patent Number(s):
PATENTS-US-A6059365
Assignee:
SNL; ERA-14-001156; EDB-88-184977
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM ARSENIDES; SUPERLATTICES; GALLIUM ARSENIDES; INDIUM ARSENIDES; ELECTRON-HOLE COUPLING; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; INVENTIONS; LAYERS; SEMICONDUCTOR DEVICES; VELOCITY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES; TRANSISTORS; 360602* - Other Materials- Structure & Phase Studies; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., and Zipperian, T.E.. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States: N. p., 1987. Web.
Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., & Zipperian, T.E.. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields. United States.
Chaffin, R.J., Dawson, L.R., Fritz, I.J., Osbourn, G.C., and Zipperian, T.E.. Mon . "Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields". United States.
@article{osti_7014915,
title = {Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields},
author = {Chaffin, R.J. and Dawson, L.R. and Fritz, I.J. and Osbourn, G.C. and Zipperian, T.E.},
abstractNote = {A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jun 08 00:00:00 EDT 1987},
month = {Mon Jun 08 00:00:00 EDT 1987}
}