Apparatus and method for depositing coating onto porous substrate

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865972

Isenberg, Arnold O ^[1]; Zymboly, Gregory E ^[2]

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1. Forest Hills Boro, PA
2. Penn Hills Township, Allegheny County, PA

Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases. The attack by the by-products of the reaction on the substrate are reduced by maintaining the flow rate of the first reactant through the pores of the substrate.

• Research Organization: Westinghouse Electric Corp., Pittsburgh, PA (United States)
• DOE Contract Number: AC02-80ET17089
• Assignee: Westinghouse Electric Corp. (Pittsburgh, PA)
• Patent Number(s): US 4609562
• OSTI ID: 865972
• Country of Publication: United States
• Language: English

Related Subjects

apparatus
method
depositing
coating
porous
substrate
disclosed
forming
chemically
vapor
deposited
oxygen
gaseous
reactant
containing
source
permeates
pores
react
means
controlling
pressure
flow
rate
manometer
measuring
difference
reactants
changing
detecting
closing
cracks
reducing
whenever
falls
suddenly
gradually
rising
increasing
gases
attack
by-products
reaction
reduced
maintaining
deposited coating
gaseous reactants
vapor deposited
gaseous reactant
flow rate
porous substrate
pressure difference
chemically vapor
/427/118/