Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

Patent · Tue Feb 14 00:00:00 EST 1984

OSTI ID:864882

Gonzalez, Franklin N ^[1]; Neugroschel, Arnost ^[1]

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1. Gainesville, FL

A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

• Research Organization: Solar Energy Research Institute
• DOE Contract Number: XS-9-8275-1
• Assignee: University of Florida (Gainesville, FL)
• Patent Number(s): US 4431858
• Application Number: 06/377,558
• OSTI ID: 864882
• Country of Publication: United States
• Language: English

Related Subjects

method
quasi-grain
boundary-free
polycrystalline
solar
cell
structure
obtained
provided
increase
efficiency
cells
suppressing
completely
eliminating
recombination
losses
due
presence
grain
boundaries
achieved
avoiding
formation
p-n
junction
types
junctions
active
basic
concept
applied
material
beneficial
cost-effective
materials
grains
including
film
film materials
losses due
cell structure
crystalline material
p-n junction
grain boundaries
solar cell
solar cells
polycrystalline material
film material
grain boundary
polycrystalline solar
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