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Title: Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

Patent ·
OSTI ID:6763520

A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

Assignee:
University of Florida
Patent Number(s):
US 4431858
OSTI ID:
6763520
Resource Relation:
Patent File Date: Filed date 12 May 1982; Other Information: PAT-APPL-377558
Country of Publication:
United States
Language:
English