Method of depositing a high-emissivity layer

Patent · Sat Jan 01 00:00:00 EST 1983

OSTI ID:864770

Wickersham, Charles E ^[1]; Foster, Ellis L ^[2]

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1. Columbus, OH
2. Powell, OH

A method of depositing a high-emissivity layer on a substrate comprising RF sputter deposition of a carbide-containing target in an atmosphere of a hydrocarbon gas and a noble gas. As the carbide is deposited on the substrate the hydrocarbon gas decomposes to hydrogen and carbon. The carbon deposits on the target and substrate causing a carbide/carbon composition gradient to form on the substrate. At a sufficiently high partial pressure of hydrocarbon gas, a film of high-emissivity pure carbon will eventually form over the substrate.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Wickersham; Charles E. (Columbus, OH); Foster; Ellis L. (Powell, OH)
• Patent Number(s): US 4414085
• OSTI ID: 864770
• Country of Publication: United States
• Language: English

Related Subjects

method
depositing
high-emissivity
layer
substrate
comprising
rf
sputter
deposition
carbide-containing
target
atmosphere
hydrocarbon
gas
noble
carbide
deposited
decomposes
hydrogen
carbon
deposits
causing
composition
gradient
form
sufficiently
partial
pressure
film
pure
eventually
substrate comprising
rf sputter
carbon deposits
pure carbon
sputter deposition
hydrocarbon gas
partial pressure
noble gas
sputter deposit
high-emissivity layer
rate comprising
carbon composition
/204/