Gallium nitride thin films deposited by radio-frequency magnetron sputtering

Journal Article · Sat Jul 15 04:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2208988· OSTI ID:20777308

Maruyama, Toshiro; Miyake, Hidetomo ^[1]

---

1. Department of Chemical Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8510 (Japan)

Effects of self-induced negative bias in radio-frequency (rf) sputtering on the structure of the deposited film are discussed on the basis of the measured characteristics of the gallium nitride (GaN) films. A powdered GaN target was sputtered by either argon (Ar) or nitrogen (N{sub 2}) gas to investigate the effects of the sputtering. When sputtering with Ar gas, the resputtering due to the ion bombardments produces a film deficient in nitrogen with poor crystallinity. The ion bombardment eventually destroys the crystal structure producing a black amorphous film caused by gallium atoms forming clusters. Alternatively, when sputtering with N{sub 2} gas, the activated nitrogen atmosphere enhances nitrogen incorporation and prevents the destruction of the crystal structure, making the film stoichiometric. To obtain high crystallinity, the effect of the self-induced negative bias should be minimized by decreasing the rf power and increasing the total pressure.

• OSTI ID: 20777308
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 4 Vol. 24; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ARGON
CRYSTAL STRUCTURE
DEPOSITION
GALLIUM
GALLIUM NITRIDES
ION BEAMS
MAGNETRONS
NITROGEN
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SPUTTERING
THIN FILMS