Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

Journal Article · Thu Mar 28 00:00:00 EST 2002 · IEEE Transactions on Electron Devices

OSTI ID:838066

Holland, Stephen E; Groom, Donald E; Palaio, Nick P; Stover, Richard J; Wei, Mingzhi

Charge-coupled devices (CCD's) have been fabricated on high-resistivity silicon. The resistivity, on the order of 10,000 {Omega}-cm, allows for depletion depths of several hundred microns. Fully-depleted, back-illuminated operation is achieved by the application of a bias voltage to a ohmic contact on the wafer back side consisting of a thin in-situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for good short wavelength response, while the relatively large depleted thickness results in good near-infrared response.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Director, Office of Science. Office of High Energy and Nuclear Physics. Division of High Energy Physics; National Science Foundation (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 838066
• Report Number(s): LBNL-49992; R&D Project: 421515; TRN: US200507%%296
• Journal Information: IEEE Transactions on Electron Devices, Vol. 50, Issue 1; Other Information: Submitted to IEEE Transactions on Electron Devices: Volume 50, No.1; Journal Publication Date: 01/2003; PBD: 28 Mar 2002
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
CHARGE-COUPLED DEVICES
INDIUM
SILICON
THICKNESS
TIN OXIDES
WAVELENGTHS
CHARGE COUPLED DEVICE FULLY DEPLETED BACK ILLUMINATED