Large-Format, Fully-Depleted, Back-Illuminated CMOS Imaging Technology
- Voxtel, Inc., Beaverton, OR (United States)
A Voxtel-led team has developed a new class of large-area, high-performance, backside-illuminated CMOS imaging sensor for low-light-level surveillance applications, specifically designed for both low-noise and high near-infrared (NIR) response. The imager integrates two technologies: 1) large-area backside-illuminated (BSI) imaging; and 2) high-density 3D via-less electrical interconnection and wafer bonding. In this program, Voxtel, in collaboration with Jazz Semiconductor, Sharp Labs and Ziptronix Inc., developed and fabricated a wafer-scale imaging platform. We integrated the design rules necessary for large-area photocomposition using a sub-field stitched reticle at Jazz, and wafer-scale 3D stacked electrical connect using the Ziptronix process. The Jazz CA25QFES process was shown to be ideal for use in the Ziptronix process because of its compatibility with the last via back end of line (BEOL) process used to create tungsten vias up to the wafer surface. To accomplish program goals, Voxtel integrated and fabricated a stitched CMOS ROIC design, and bonded the ROIC to an array of thick, high-resistivity, fully depleted pinned silicon photodiodes, fabricated in a silicon-on-insulator (SOI) wafer. By fabricating the detector and ROIC separately, the silicon used to fabricate the circuits from the ROIC and the fully depleted, high-resistivity silicon detector array are optimized for their respective tasks, improving their performance, increasing yield, and reducing cost.
- Research Organization:
- Voxtel, Inc., Beaverton, OR (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- sc0004236
- OSTI ID:
- 1221583
- Report Number(s):
- DOE-VOXT-04236-1
- Country of Publication:
- United States
- Language:
- English
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