Characterization of prototype BTeV silicon pixel sensors before and after irradiation
Conference
·
OSTI ID:790257
We report on measurements performed on silicon pixel sensor prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The sensors are of n{sup +}/n/p{sup +} type with multi-guard ring structures and p-stop electrode isolation. Electrical characterization of such devices was performed before and after irradiation up to proton fluence of 4 x 10{sup 14} p cm{sup -2}. We tested pixel sensors fabricated from normal and oxygen-enriched silicon wafers and with two different p-stop isolation layouts: common p-stop and individual p-stop.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 790257
- Report Number(s):
- FERMILAB-Conf-01/344-E; TRN: US0200409
- Resource Relation:
- Conference: 2001 IEEE NSS/MIC, San Diego, CA (US), 11/04/2001--11/10/2001; Other Information: PBD: 18 Jan 2002
- Country of Publication:
- United States
- Language:
- English
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