Electrical characterization of irradiated prototype silicon pixel sensors for BTeV
The pixel detector in the BteV experiment at the Tevatron (Fermi Laboratory) is an important detector component for high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10{sup 14} minimum ionizing particles/cm{sup 2}/year. Radiation hardness of prototype n{sup +}/n/p{sup +} silicon pixel sensors has been investigated. We present Electrical characterization curves for irradiated prototype n{sup +}/n/p{sup +} sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10{sup 14} protons/cm{sup 2}.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 804444
- Report Number(s):
- FERMILAB-Conf-02/281-E; TRN: US0205303
- Resource Relation:
- Conference: 2002 IEEE Nuclear Science Symposium and Medical Imaging Conference, Norfolk, VA (US), 11/10/2002--11/16/2002; Other Information: PBD: 13 Nov 2002
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of prototype BTeV silicon pixel sensors before and after irradiation
Overview of the BTeV Pixel Detector