Step structure of GaInAsSb grown by OMVPE (Organometallic Vapor Phase Epitaxy)
Conference
·
OSTI ID:754918
The microscopic surface morphology of GaInAsSb grown by organometallic vapor phase epitaxy (OMVPE)on GaSb substrates has been studied by atomic force microscopy. The effects of growth temperature, alloy composition, and substrate misorientation on the step structure were investigated. The competition between thermodynamically driven phase separation and kinetically limited surface diffusion is discussed.
- Research Organization:
- Knolls Atomic Power Lab., Niskayuna, NY (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 754918
- Report Number(s):
- KAPL-P-000304; K99064; TRN: AH200017%%271
- Resource Relation:
- Conference: OMVPE Workshop, Ponte Verde Beach, FL (US), 05/23/1999--05/27/1999; Other Information: PBD: 23 May 1999
- Country of Publication:
- United States
- Language:
- English
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