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Title: Electronic structure of defects in oxides. Final report, December 1, 1979-November 30, 1980. [. cap alpha. -Al/sub 2/O/sub 3/; MgAl/sub 2/O/sub 4/]

Technical Report ·
DOI:https://doi.org/10.2172/7039102· OSTI ID:7039102

Details of the electronic structure of F-type centers in the series of oxides SrO, CaO, ..cap alpha..-Al/sub 2/O/sub 3/ and MgAl/sub 2/O/sub 4/ have been determined using measurements of photoconductivity, luminescence, and fluorescence lifetimes. Measurements were made over the spectral range 2 to 6.5 eV and over the temperature range 4 to 350/sup 0/K. The centers were introduced into SrO by electron, on proton or neutron bombardment, into CaO and ..cap alpha..-Al/sub 2/O/sub 3/ by electron a neutron bombardment or thermochemical coloration, and into MgAl/sub 2/O/sub 4/ by particle bombardment. In some cases, notably CaO and ..cap alpha..-Al/sub 2/O/sub 3/, the photoconductivity behaves differently depending on the method used to introduce the centers. In particular, neutron irradiated and some thermochemically colored samples of sapphire contain an effective electron trap with an optical transition energy of approx. 5.0 eV and a thermal excitation energy of 0.72 eV as determined by measurements of photoconductivity, thermoluminescence and phosphorescence. This trap appears to be structural defect consisting of an aggragate of anion vacancies.

Research Organization:
Oklahoma State Univ., Stillwater (USA)
DOE Contract Number:
AS05-76ER04837
OSTI ID:
7039102
Report Number(s):
DOE/ER/04837-7; TRN: 81-001012
Country of Publication:
United States
Language:
English