Gallium phosphide high-temperature bipolar junction transistor
Preliminary results are reported on the development of a high-temperature (> 350/sup 0/C) gallium phosphide bipolar junction transistor (BJT) for goethermal and other energy applications. This four-layer p/sup +/n/sup -/pp/sup +/ structure was fromed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The gallium phosphide BJT is observed to have a common-emitter current gain peaking in the range of 6 to 10 (for temperatures from 20/sup 0/C to 400/sup 0/C) and a room-temperature, punchthrough-limited, collector-emitter breakdown voltage of approximately -6V. Other parameters of interest include an f/sub/ = 400 KHz (at 20/sup 0/C) and a collector base leakage current = 200 ..mu..A (at 350/sup 0/C).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6883244
- Report Number(s):
- SAND-81-0139C; CONF-810316-1
- Resource Relation:
- Conference: High temperature electronics conference, Tucson, AZ, USA, 25 Mar 1981
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
42 ENGINEERING
FIELD EFFECT TRANSISTORS
DESIGN
FABRICATION
GALLIUM PHOSPHIDES
SEMICONDUCTOR JUNCTIONS
EPITAXY
GEOTHERMAL ENERGY
HIGH TEMPERATURE
ENERGY
ENERGY SOURCES
GALLIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RENEWABLE ENERGY SOURCES
SEMICONDUCTOR DEVICES
TRANSISTORS
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