Gallium phosphide high-temperature bipolar junction transistor

Journal Article · Tue Dec 01 00:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92598· OSTI ID:6120447

Zipperian, T E; Dawson, L R

Transistor action at temperatures from 20 to 450 /sup 0/C has been demonstrated for p/sup +/n/sup -/pp/sup +/ bipolar structures fabricated in GaP. Improvements in the materials technology were essential to successful fabrication of these devices. The structural configuration chosen could also be used as a junction field-effect transistor although this mode of operation was limited by the initial design to lower operating temperatures. While present device characteristics are restricted by ohmic contact resistance, this does not appear to be a fundamental limitation. These results demonstrate that GaP is a good materials candidate in which to base a technology for active electronic components operated at high temperatures.

• Research Organization: Sandia National Laboratories Albuquerque, New Mexico 87185
• OSTI ID: 6120447
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 39:11
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JUNCTION TRANSISTORS
CONFIGURATION
FABRICATION
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
FIELD EFFECT TRANSISTORS
GALLIUM PHOSPHIDES
HIGH TEMPERATURE
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)