GaP/Al/sub x/Ga/sub 1-x/P heterojunction bipolar junction transistor for high-temperature electronic applications

Conference · Fri Jan 01 00:00:00 EST 1982

OSTI ID:6855149

Zipperian, T E; Dawson, L R

Useful bipolar transistor action over the full temperature range from 78 to 823K has been demonstrated for mesa-isolated, liquid-phase epitaxial n/sup +/npn, GaP/Al/sub 0/ /sub 35/Ga/sub 0/ /sub 65/P/GaP/GaP structures. This represents both the highest temperature and the widest temperature range (745K) over which useful solid-state transistor action has ever been demonstrated in any III-V compound semiconductor system. These results imply that the GaP/Al/sub x/Ga/sub 1-x/P chemical system is an excellent materials candidate in which to base a technology for high-temperature electronics and the results also imply the very real possibility of functional solid-state devices and circuits at temperatures in excess of 500/sup 0/C.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6855149
• Report Number(s): SAND-82-1544C; CONF-821207-1; ON: DE83001267
• Resource Relation: Conference: IEEE international electron devices meeting, San Francisco, CA, USA, 13 Dec 1982; Other Information: Portions of document are illegible
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JUNCTION TRANSISTORS
TEMPERATURE EFFECTS
ALUMINIUM PHOSPHIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HIGH TEMPERATURE
WELL LOGGING EQUIPMENT
ALUMINIUM COMPOUNDS
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)