skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic devices. Final report, July 17, 1976-September 1, 1978

Technical Report ·
DOI:https://doi.org/10.2172/6721848· OSTI ID:6721848

The goal of this work was to evaluate the suitability of Zn/sub 3/P/sub 2/ as a potentially low cost, high conversion efficiency material for photovoltaic devices. The important results of the research are presented and discussed. The major accomplishments of this work are: (1) the development of a vapor transport method for the growth of large single crystals; (2) the development of two methods of thin film growth: vacuum evaporation and close space transport; (3) the determination of the optical constants of Zn/sub 3/P/sub 2/ including the indices of refraction, the optical absorption coefficient, and the ultra-violet to visible reflectivity spectra; (4) a determination of the factors which influence the electrical conductivity and how these relate to the defect chemistry of Zn/sub 3/P/sub 2/; (5) measurement of the barrier height of metal-Zn/sub 3/P/sub 2/ contacts and the development of a model which relates the barrier height to the properties of the metal-semiconductor interface; (6) measurement of the minority carrier diffusion length in Zn/sub 3/P/sub 2/; (7) the development of several single and double layer anti-reflection coatings; and (8) the development of Schottky barrier photovoltaic devices employing a grid device and transparent metal film design, with conversion efficiencies as high as 6.08% (total area) or 7.6% (active area).

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC01-76ET20221
OSTI ID:
6721848
Report Number(s):
DOE/ET/20221-T1
Country of Publication:
United States
Language:
English