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Title: Improved semiconductors for photovoltaic cells. Quarterly report No. 6, October 1-December 31, 1977

Technical Report ·
DOI:https://doi.org/10.2172/6736229· OSTI ID:6736229

The purpose of work on this contract is to study the suitability of Zn/sub 3/P/sub 2/ as a photovoltaic material for large scale terrestrial use. Zn/sub 3/P/sub 2/ was selected after a systematic literature search revealed it as one of the most promising unexplored semiconductors suitable for use as the absorber-generator portion of a photovoltaic cell. During this quarter the main emphasis has been on the fabrication and testing of transparent beryllium metal film Schottky barrier devices. Good AM1 sort circuit currents have been obtained although optical losses within the structure are high. Correcting for optical losses, yields an estimated peak current collection efficiency of 74%. The open circuit voltage of these devices is lower than expected, primarily due to a low junction barrier height. Lower than expected barrier heights for other metals indicate the Fermi level is pinned at the surface in contrast to results reported earlier. Those results had suggested barrier height scales with meal work function. Crystal growth is sufficiently developed to provide suitable material for devices, but further refinements are necessary to improve grain size. A volatile oxide has been identified as a nuclei forming agent. A close-spaced vapor transport apparatus has been designed and constructed, as an alternative technique for thin film preparation.

Research Organization:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
DOE Contract Number:
AC01-76ET20221
OSTI ID:
6736229
Report Number(s):
COO-2460-6
Country of Publication:
United States
Language:
English